AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

We demonstrate the electrical performances of AlGaN/GaN metal–insulator–semiconductorhigh electron mobility transistors (MIS-HEMTs) with high quality Al2O3 gate dielectric deposited by plasma enhanced atomic layer deposition using both H2O and remote O2 plasma as oxygen sources. Excellent gate-dielectric/GaN interface and Al2O3 film quality were obtained, resulting in a very small threshold voltage hysteresis and a low interface trap density. The MIS-HEMT device exhibited high on/off current ratio of $sim 10^{10}$ , steep subthreshold slope, small gate leakage current, low dynamic on-resistance degradation, and effectively current collapse suppression. These results indicate that incorporating remote O2 plasma in the ALD-Al2O3 deposition process is an effective and simple way to provide high quality gate dielectric for the GaN MIS-HEMTs production

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