The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric. High program/erase speed as well as large shift of the threshold voltage were obtained. Charges injection was improved according to the constant current stress measurement. The application of separated charge trapping layer can considerably improve the performance of charge trapping memory.
Note from Journals.Today : This content has been auto-generated from a syndicated feed.