Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory

Metal/ferroelectric-Si:HfO2/SiN/SiO2/Si structure was fabricated to investigate the charge trapping properties. This device enhances the carrier injection into the nitride from the silicon due to the spontaneous polarization in SiO2:HfO2 layer. Compared with conventional metal/SiO2/SiN/SiO2/Si devices, the proposed devices showed a larger memory window, faster program/erase speeds, and higher endurance with comparable retention properties.

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